Citation
Ai. Yakimov et al., Formation of zero-dimensional hole states in Ge/Si heterostructures probedwith capacitance spectroscopy, THIN SOL FI, 336(1-2), 1998, pp. 332-335
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090
→ ACNP
Volume
336
Issue
1-2
Year of publication
1998
Pages
332 - 335
Database
ISI
SICI code
0040-6090(199812)336:1-2<332:FOZHSI>2.0.ZU;2-Y
Abstract
Hole energy spectrum in Ge/Si(001) heterostructures grown by molecular-beam
epitaxy are studied using capacitance spectroscopy at a temperature range
of 4.2-300 K. We find that the formation of Ge islands as the effective fil
m thickness exceeds six monolayers lends to the appearance of the zero-dime
nsional hole states associated with Ge quantum dots. Analysis of the capaci
tance-voltage characteristics of structures containing the quantum-dot 'ato
ms' and the quantum-dot 'molecules' reveals the Coulomb charging effect. (C
) 1998 Elsevier Science S.A. All nights reserved.