Oscillatoric bias dependence of DC-electric field induced second harmonic generation from SiSiO2 multiple quantum wells

Authors
Savkin, VV Fedyanin, AA Pudonin, FA Rubtsov, AN Aktsipetrov, OA
Citation
Vv. Savkin et al., Oscillatoric bias dependence of DC-electric field induced second harmonic generation from SiSiO2 multiple quantum wells, THIN SOL FI, 336(1-2), 1998, pp. 350-353
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
336
Issue
1-2
Year of publication
1998
Pages
350 - 353
Database
ISI
SICI code
0040-6090(199812)336:1-2<350:OBDODF>2.0.ZU;2-B
Abstract
Electronic properties and morphology of the multiple Si-SiO2 quantum wells (MQWs), deposited on top of vicinal Si(001) substrate are studied by DC-ele ctric field induced second harmonic generation (SHG). Non-linear contributi on is associated with offset structure of the silicon layers of MQWs. Regul ar oscillations of the SHG intensity in the DC-electric field domain are ob served. This oscillatoric SHG dependence stems from the non-monotonic depen dence of the DC-electric held on the external bias voltage applied to the m ultilayer structure. The mechanism behind this phenomenon is essentially re lated to quantum confinement effects in 2D silicon layers. (C) 1998 Elsevie r Science S.A. All rights reserved.