The determination of e(14) in (111)B-grown (In,Ga)As/GaAs strained layers

Authors
Ballet, P Disseix, P Leymarie, J Vasson, A Vasson, AM Grey, R
Citation
P. Ballet et al., The determination of e(14) in (111)B-grown (In,Ga)As/GaAs strained layers, THIN SOL FI, 336(1-2), 1998, pp. 354-357
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
336
Issue
1-2
Year of publication
1998
Pages
354 - 357
Database
ISI
SICI code
0040-6090(199812)336:1-2<354:TDOEI(>2.0.ZU;2-L
Abstract
Strained layer (111)B-grown In0.15Ga0.85As/GaAs p-i-n quantum well structur es have been investigated by thermally-detected optical absorption and modu lation spectroscopy in order to determine the piezoelectric constant in the (In,Ga)As layers, The impact of both indium segregation and temperature is shown to be great on this determination. We show that those two phenomena may account for the discrepancy between the values reported in the literatu re and that expected from a linear interpolation between the piezoelectric constants of the two binaries InAs and GaAs. (C) 1998 Elsevier Science S.A. All rights reserved.