RF-sputtering deposition of Al/Al2O3 multilayers

Citation
L. Paven-thivet et al., RF-sputtering deposition of Al/Al2O3 multilayers, THIN SOL FI, 336(1-2), 1998, pp. 373-376
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
336
Issue
1-2
Year of publication
1998
Pages
373 - 376
Database
ISI
SICI code
0040-6090(199812)336:1-2<373:RDOAM>2.0.ZU;2-7
Abstract
In order to study mechanical and electrical behaviour of nanoscale laminate d materials, Al/Al2O3 multilayers have been deposited by reactive rf-sputte ring for substrate temperature T-8 ranging from -80 degrees C to 600 degree s C. Polycrystallised aluminium films exhibit a rough surface, with grain s ize increasing with substrate temperature. Alumina films are amorphous, wit h smooth surface, except a high temperature. Al/Al2O3 multilayers were elab orated by lowering period thickness from 40 to 2 nm, keeping a 1:1 Al/Al2O3 ratio. As metal films, multilayers present a granular surface. SEM cross-s ection observations did not point out any laminated structure. Nevertheless , X-ray reflectometry have demonstrated the multilayering character of film s with emergence of different Bragg peaks. This character seems to decrease with increasing temperature as the number of peaks is gradually reduced fr om T-s = -80 degrees C to T-s = 600 degrees C. This may be due to the incre asing roughness of aluminium layers with temperature, added to a possible d iffusion of oxygen. (C) 1998 Elsevier Science S.A. All rights reserved.