Stress generation and annihilation during hydrogen injection into and extraction from anodic WO3 films

Authors
Citation
Dj. Kim et Si. Pyun, Stress generation and annihilation during hydrogen injection into and extraction from anodic WO3 films, ELECTR ACT, 44(11), 1999, pp. 1723-1732
Citations number
24
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
ELECTROCHIMICA ACTA
ISSN journal
00134686 → ACNP
Volume
44
Issue
11
Year of publication
1999
Pages
1723 - 1732
Database
ISI
SICI code
0013-4686(1999)44:11<1723:SGAADH>2.0.ZU;2-I
Abstract
The present work is aimed at investigating the stress generation and releas e during hydrogen injection into and extraction from anodic WO3 films in a 0.1 M H2SO4 solution using a laser beam deflection technique, combined with cyclic voltammetry and potentiostatic current transients, For this purpose the distribution of donor concentration was measured over the anodic oxide film using the electrochemical impedance technique. From the experimental results, it is suggested that the oxygen vacancies are inherently distribut ed enriched in the 'layer' adjacent to the anodic WO3 film/W metal interfac e. The attractive interactions operating between hydrogen and trap sites al most completely release the tensile stresses which would be exerted on the area adjacent to the oxygen vacancies in the absence of the attractive inte ractions. The area next to the oxygen vacancies provides reversible and irr eversible trap sites for hydrogen in the anodic WO3 film. It is concluded t hat major compressive stresses developed during hydrogen injection into the film are attributed to hydrogen positioned at reversibly active sites, whi le minor compressive stresses are caused by hydrogen injection into reversi ble and irreversible trap sites. (C) 1999 Elsevier Science Ltd. All rights reserved.