Double-resonant structure in the high-frequency transresistance of coupledelectron-hole systems

Authors
Citation
B. Dong et Xl. Lei, Double-resonant structure in the high-frequency transresistance of coupledelectron-hole systems, EUR PHY J B, 7(1), 1999, pp. 147-153
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
EUROPEAN PHYSICAL JOURNAL B
ISSN journal
14346028 → ACNP
Volume
7
Issue
1
Year of publication
1999
Pages
147 - 153
Database
ISI
SICI code
1434-6028(199901)7:1<147:DSITHT>2.0.ZU;2-2
Abstract
The linear de and high-frequency transresistivity of coupled electron-hole systems are investigated using the Lei-Ting balance equations approach exte nded to include many-body corrections. A possible indirect method of experi mentally measuring the dynamical transresistivity in the high frequency (te rahertz) regime is designed basing on the detailed analysis on the relation ship between the directly measurable resistivities in the electron- and hol e-layer and the dynamical transresistance. The theoretically predicted de t ransresistance is in good agreement with the experimental data for the give n electron-hole system experimentally investigated. The calculated dynamica l transresistance exhibits pronounced double-resonant structure, which can be attributed to the cooperation and competition between the two plasmon mo des. It is pointed out that the behavior of the frequency-dependent transre sistance is temperature-sensitive and the dynamical transport properties ar e essentially influenced by the short range correlations.