Novel methods of TXRF analysis for silicon wafer surface inspection

Authors
Fabry, L Pahlke, S Kotz, L Wobrauschek, P Streli, C
Citation
L. Fabry et al., Novel methods of TXRF analysis for silicon wafer surface inspection, FRESEN J AN, 363(1), 1999, pp. 98-102
Citations number
15
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences
Journal title
FRESENIUS JOURNAL OF ANALYTICAL CHEMISTRY
ISSN journal
09370633 → ACNP
Volume
363
Issue
1
Year of publication
1999
Pages
98 - 102
Database
ISI
SICI code
0937-0633(19990101)363:1<98:NMOTAF>2.0.ZU;2-C
Abstract
TXRF became a standard, on-line inspection cool fur controlling the cleanli ness of polished Si wafers for semiconductor use. Wafer makers strive for a n all-over metallic cleanliness of < 10(10) atoms . cm(-2). The all-over cl eanliness can be analyzed using VPD/TXRE For VPD preparation and scanning w e have developed an automatic system coupled with TXRF. With synchrotron ra diation TXRF we were able to detect 13 fg of Ni in a residual microdroplet, i.e.10(5) atoms . cm(-2).