Monolithic high-speed CMOS-photoreceiver

Results of optoelectronic integrated CMOS receivers for applications in opt ical data transmission and in optical interconnects are presented. The rise and fall times of the integrated p-i-n photodiodes CPD's) are 0.19 and 0.2 4 ns, respectively, corresponding to -3-dB bandwidths in excess of 1.4 GHz. These PD's combine this high speed with a high quantum efficiency. Rise an d fall times of 0.53 and 0.69 ns, respectively, are obtained for CMOS optoe lectronic integrated circuits (OEIC's) with integrated p-i-n PD's, These OE IC's in 1.0-mu m CMOS technology handle a data rate of 622 Mb/s with a sing le-supply voltage of 3.3 V.