Two-chip InGaAs-InP Fabry-Perot p-i-n receiver for WDM systems

For the first time a two-chip wavelength-selective InGaAs-InP Fabry-Perot p -i-n receiver for dense wavelength-division-multiplexed systems is presente d. This concept allows one to easily place the p-i-n diode! outside the res onant cavity, A cavity length of more than 30 mu m is applied to obtain a s mall optical bandwidth of the receiver. The device can be combined with mic romachined actuators for wavelength tuning. First measurements of the recei ver showed a full-width at half-maximum bandwidth of 0.6 nm and a finesse o f 53. The overall lasses of the receiver including fiber-to-chip coupling l osses are 6.6 dB.