Voltage controlled SAW velocity in GaAs/LiNbO3-hybrids

Citation
M. Rotter et al., Voltage controlled SAW velocity in GaAs/LiNbO3-hybrids, IEEE ULTRAS, 46(1), 1999, pp. 120-125
Citations number
20
Categorie Soggetti
Optics & Acoustics
Journal title
IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL
ISSN journal
08853010 → ACNP
Volume
46
Issue
1
Year of publication
1999
Pages
120 - 125
Database
ISI
SICI code
0885-3010(199901)46:1<120:VCSVIG>2.0.ZU;2-T
Abstract
The combination of the electronic properties of semiconductor heterojunctio ns and the acoustic properties of piezoelectric materials yields very promi sing surface acoustic wave (SAW) hybrid systems. Quasi-monolithical integra tion of thin GaAs/InGaAs/AlGaAs-quantum well structures on LiNbO3 SAW devic es is achieved using the epitaxial lift-off (ELO) technique. The conductivi ty of the two-dimensional electron system in the quantum well, which can be controlled via field effect, modifies the velocity of the SAW. Due to the high electromechanical coupling coefficient of LiNbO3 a large phase shift c an be obtained. As an example for this new class of voltage-tunable single chip SAW devices, a voltage-controlled oscillator (VCO) is presented in whi ch the output frequency can be tuned by an applied gate voltage.