Amorphous CNx films prepared by electrochemical deposition

Amorphous carbon nitride (CNx) films have been synthesized by electrochemic al deposition on positive biased silicon substrates at room temperature. Th e films adhere well to the Si substrates, but are softer than Si and have m any cracks. Multiple binding energy values obtained for the C 1s and N 1s p hotoelectrons in the film suggest that the C and N atoms both exhibit three chemical states. The Fourier transformation infrared spectroscopy for the film shows four main bands at 1351 cm(-1), 1660 cm(-1) 2147 cm(-1) and 3220 cm(-1), respectively. The N to C concentration ratio was estimated to be 0 .1. Red color photoluminescence with a peak at similar to 630 nm has been o bserved in the prepared CNx films. (C) 1999 Elsevier Science B.V. All right s reserved.