Ferroelectric properties of sol-gel deposited Pb(Zr,Ti)O-3/LaNiO3 thin films on single crystal and platinized-Si substrates

Electrically conductive LaNiO3 (LNO) and ferroelectric Pb(Zr0.52Ti0.48)O-3 (PZT) thin films were deposited on single crystal (100)SrTiO3 (STO), (100)L aAlO3 (LAO), and Pt/Ti/SiO2/Si(100) substrates using solution deposition ro utes. X-ray diffraction and scanning electron microscopy were used to inves tigate the crystallinity and microstructure of the films. The surface bondi ng states of the PZT and LNO films were determined by X-ray photoelectron s pectroscopy (XPS). The average room-temperature dielectric constant of the PZT films, measured at 1 kHz, was in the range 905-1002 and the dissipation factor was below 0.03 for all films. The remnant polarization and coercive electric field of the PZT/LNO films deposited on (100)STO, (100)LAO, and P t/Ti/SiO2/Si substrates were 30, 32 and 19 mu/cm(2), and 84, 87 and 57 kV/c m, at applied electric field of 450 kV/cm, respectively. (C) 1999 Elsevier Science B.V. All rights reserved.