Rutherford backscattering/channeling study of the implanted MeV Au+ in silicon

1.0 MeV Au+ ions were implanted into a Si single crystal and an amorphous s ilicon film at room temperature. For the case of the Si single crystal, ion implantation was performed at angles of 7, 45 and 60 degrees, respectively . The amorphous silicon film was deposited on SiO2 substrate with a thickne ss of similar to 500 nm. The longitudinal and lateral distributions of impl anted Au ions in silicon were measured by Rutherford backscattering spectro metry. The lateral spread was estimated from the till angle implantation. T he results show that the experimental mean projected range is larger than t he calculated value by similar to 20%, and the experimental range stragglin g and lateral spread deviate significantly from the TRIM prediction. The da mage in the Si single crystal induced by MeV Au+ under different fluences w as studied by Rutherford backscattering/channeling. Also, the thermal behav iour of the implanted Au+ in silicon was investigated. (C) 1999 Elsevier Sc ience S.A. All rights reserved.