Carrier lifetimes in heavily irradiated silicon diodes

Authors
Beattie, L Brodbeck, TJ Chilingarov, A Hughes, G McGarry, S Ratoff, P Sloan, T
Citation
L. Beattie et al., Carrier lifetimes in heavily irradiated silicon diodes, NUCL INST A, 421(3), 1999, pp. 502-511
Citations number
19
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
ISSN journal
01689002 → ACNP
Volume
421
Issue
3
Year of publication
1999
Pages
502 - 511
Database
ISI
SICI code
0168-9002(19990201)421:3<502:CLIHIS>2.0.ZU;2-3
Abstract
Charge collection efficiencies for both minimum ionising and alpha-particle illumination have been measured for planar diodes which had been irradiate d with fluences up to 3 x 10(14) equivalent 1 MeV neutrons cm(-2). These ch arge collection efficiencies have been fitted with a simple model and the c arrier lifetimes extracted. The lifetimes are consistent with extrapolation s of previous results at lower fluences. There is evidence of extra complic ation due to the heavy irradiation. (C) 1999 Elsevier Science B.V. All righ ts reserved.