Cx. Li et al., Electronic structure study of liquid germanium based on x-ray-absorption near-edge structure spectroscopy, PHYS REV B, 59(3), 1999, pp. 1571-1574
Based on measured x-ray-absorption near-edge structure spectra of crystalli
ne and liquid germanium (c-Ge and l-Ge), multiple-scattering simulation and
density-of-states (DOS) self-consistent calculation have been carried out.
By using the configurations generated with a reverse Monte Carlo simulatio
n, the higher and narrower white line resonance relative to the solid, and
the smearing of any other features l-Ge above the edge are reproduced and e
xplained, and the metallic character is verified by DOS calculations. The s
trong white line for l-Ge is attributed to the high density of states in th
e conduction band and partially to the excitonic effect. The DOS of l-Ge is
quite high around the Fermi level, as in a metal, while that for c-Ge open
s a gap there. Taking the core-hole effect into account, the p-like partial
DOS in the vicinity of the absorbing atom shows a DOS "piling up." [S0163-
1829(99)06303-1].