Decreases in both dark conductivity and photoconductivity after intense and
prolonged photoirradiation have been observed in the narrow-band-gap amorp
hous Sb2Se3; they are similar to those observed in hydrogenated amorphous s
ilicon (a-Si:H) (the Staebler-Wronski effect). The ac conductivity, on the
other hand, decreases after illumination, which is in contrast to that obse
rved in a-Si:H. Unlike a-Si:H, these photoinduced changes are not interpret
ed in terms of light-induced defect creation. The broadening of energy leve
ls of preexisting thermal-equilibrium defects by illumination could produce
all of these photoinduced changes in the present system. [S0163-1829(99)14
203-6].