Ks. Seol et al., Temperature dependence of the lifetime of 4.3-eV photoluminescence in oxygen-deficient amorphous SiO2, PHYS REV B, 59(3), 1999, pp. 1590-1593
The temperature dependence of the lifetime of 4.3-eV photoluminescence (PL)
excited by three PL excitation bands in oxygen-deficient amorphous silica
has been investigated in the range of 13-280 K. When the PL is excited at t
he 5.0- or 6.7-eV band, it decays single exponentially with a constant Life
time of about 4 ns irrespective of temperature. On the other hand, PL excit
ed at 7.3 eV decays nonexponentially, and its effective lifetime monotonica
lly decreases with an increase in temperature. Such a temperature dependenc
e of the PL lifetime is explained by assuming an energy diagram involving t
wo configurations of the oxygen-deficient defect. [S0163-1829(99)06604-7].