A Raman-scattering intensity analysis of folded acoustic modes in a high-qu
ality (Si15Ge4)(50) superlattice has allowed a detailed;comparison with var
ious theoretical models. The modulus of the Ge/Si photoelastic coefficient
ratio is found to be similar to 1 at 457.9 nm, but a satisfactory simultane
ous fit to all the intensity information could not be obtained with any of
the models. The role of an interface translational displacement contributio
n to the scattering cross section is shown to be significant. Odd and, for
the first time, even index confined optic modes are observed for the Si lay
ers in the polarized Raman spectrum. Lower-frequency quasiconfined optic mo
des exhibit dispersion that is consistent with previous model calculations.
[S0163-1829(99)05203-0].