Positive magnetoresistance and hole-hole scattering in GaAs/Al0.5Ga0.5As heterostructures under uniaxial compression

Resistance, magnetoresistance, and their temperature dependencies have been investigated in the two-dimensional hole gas at a [001] p-type GaAs/Al0.5G a0.5As heterointerface under [110] uniaxial compression in the range of low and intermediate magnetic fields. Analysis performed in the frame of hole- hole scattering between carriers in the two subbands of the spin split grou nd heavy hole state indicates that hole-hole scattering is strongly suppres sed by uniaxial compression. The value of the parameter alpha, which determ ines the mutual hole-hole friction coefficient eta=alpha T-2 reveals three times decrease under uniaxial compression 1.3 kbar. [S0163-1829(98)04948-0] .