Deuterium retention in beryllium surface layer in contact with atomic deuterium

Citation
Vm. Sharapov et al., Deuterium retention in beryllium surface layer in contact with atomic deuterium, PLASMA D OP, 6(1-3), 1998, pp. 89-94
Citations number
5
Categorie Soggetti
Nuclear Emgineering
Journal title
PLASMA DEVICES AND OPERATIONS
ISSN journal
10519998 → ACNP
Volume
6
Issue
1-3
Year of publication
1998
Pages
89 - 94
Database
ISI
SICI code
1051-9998(1998)6:1-3<89:DRIBSL>2.0.ZU;2-T
Abstract
The interaction of deuterium atoms with beryllium TIP-30 at 740 K was studi ed. A plasma source with heated cathode was used to produce deuterium atoms . A positive potentials was applied to the beryllium sample during D atoms exposure to screen in from positive D ions. After D atom exposure for 1 and 4 hours the depth distributions of deuterium atoms and molecules in Be wer e measured using combined SIMS and RGA methods. It has been shown that deut erium is retained in Be both in atomic and in molecular forms. Oxide film g rows on the beryllium surface during the D atom exposure and BeO thickness correlates with deuterium distribution. The retained deuterium is mainly lo cated in the oxide layer. It is suggested that the gas filled bubbles and c avities which are formed in grown oxide layer are the traps for molecular d euterium. A high concentration of D atoms in the near-surface layers is att ributed to the chemical bonding of D atoms to BeO oxide with beryllium hydr oxide formation.