Interaction of beryllium with molecular and ion deuterium. Deuterium retention in the codeposited beryllium/deuterium layer

The study of the surface and bulk processes (retention, oxide layers effect s, sputtering, implantation defects formation in the ion stopping region, c odeposition) is very important for the prediction of the hydrogen isotopes inventory in the plasma facing materials (PFM). This work presents the resu lts of the SIMS studies after gas phase saturation and implantation, prefer ential sputtering of the beryllium oxide films by the D+ and He+ ions, and the ERD measurements of the Be/D codeposition. The deuterium retention in beryllium after gas phase saturation (1 Pa, 575 K) and 5 keV D+ bombardment at temperature 375 K were studied by the SIMS m ethod. The deuterium depth distribution is presented for the implantation c ase. Sputtering of the beryllium oxide films by the D+ and He+ ions was compared . The Be oxide films preferential is sputtered during the deuterium ions bo mbardment Beryllium deposition to the glass plate was performed in a Penning discharg e cell in pure Kr atmosphere and in the D-Kr gas mixture at the deuterium p ressure 10(-2) Pa. Codeposited at the 250 K, 300 K and 375 K Be/D layers we re studied by ERD technique.