Surface state-derived electronic transitions of SiC(001)

Citation
Vm. Polyakov et al., Surface state-derived electronic transitions of SiC(001), SURF SCI, 420(1), 1999, pp. 87-94
Citations number
28
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
SURFACE SCIENCE
ISSN journal
00396028 → ACNP
Volume
420
Issue
1
Year of publication
1999
Pages
87 - 94
Database
ISI
SICI code
0039-6028(19990111)420:1<87:SSETOS>2.0.ZU;2-3
Abstract
We report on collective surface excitations at Si-terminated (2 x 1) and C- terminated c(2 x 2) surfaces of SiC(001) by using high-resolution electron energy loss spectroscopy (HREELS). The measured energy loss spectra are fit ted by two different models based on dipole scattering theory. While the fi rst model takes account of the Fuchs-Kliewer surface optical phonons and su rface plasmons only, the second one contains, additionally, a contribution from intraband plasmons due to the presence of a partially occupied surface states band. For both surfaces much better fits are obtained by the second model, i.e. if we assume the surfaces to be metallic. For the (2 x 1) surf ace this finding is in agreement with recent STM results suggesting the met allic character of this surface at high temperatures. (C) 1999 Elsevier Sci ence B.V. All rights reserved.