Density distribution of a two-dimensional electron gas in a semiconductingheterostructure with a periodic gate electrode

Calculations are made of the electron density distribution profiles in a la yer of two-dimensional electron gas in a semiconducting heterostructure whe n reference and reverse potential biases are applied simultaneously to neig hboring stripes of a periodic gate electrode. It is shown that for the stru cture parameters used experimentally the density distribution profile diffe rs appreciably from rectangular and from sinusoidal. (C) 1999 American Inst itute of Physics. [S1063-7850(99)00601-1].