Enhancement of the efficiency of i-n-GaN light-emitting diodes by electrochemical etching

An investigation was made of the electrochemical etching of i - n - GaN lig ht-emitting diode structures in aqueous solutions of KOH and NaOH to remove parasitic low-resistivity layers and inclusions in the structures which sh unt the active current flow channels through the structures and lower the e lectroluminescence intensity. The electroluminescence intensity of the stru ctures increased by two or three orders of magnitude during the etching pro cess. (C) 1999 American Institute of Physics. [S1063-7850(99)02601-4].