Magnetic crystallographic anisotropy of Fe/GaAs(100) epitaxial films

Citation
Sl. Vysotskii et al., Magnetic crystallographic anisotropy of Fe/GaAs(100) epitaxial films, TECH PHYS L, 25(1), 1999, pp. 79-82
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
TECHNICAL PHYSICS LETTERS
ISSN journal
10637850 → ACNP
Volume
25
Issue
1
Year of publication
1999
Pages
79 - 82
Database
ISI
SICI code
1063-7850(199901)25:1<79:MCAOFE>2.0.ZU;2-3
Abstract
An investigation was made of the anisotropic properties of Fe films obtaine d by molecular-beam epitaxy on GaAs(100) substrates. It is shown that at th icknesses t = 40-50 Angstrom the Fe films begin to exhibit cubic magnetic a nisotropy. At thicknesses t > 100 Angstrom the first constant of cubic anis otropy K-1 has values similar to those for "bulk'' Fe single crystals. Film s of intermediate thickness 50 < t < 100 Angstrom possess both isotropic an d anisotropic phases. (C) 1999 American Institute of Physics. [S1063-7850(9 9)03201-2].