Combined electric field and near-field scanning optical microscopy: modification of silicon surfaces

A combined electric field and near-field scanning optical microscope (EF-NS OM) system has been developed for imaging and modifying surfaces. With a ne gative bias applied to the conducting scaling probe with respect to the sub strate, the EF-NSOM system is used to modify nearly atomically flat n-type oxide-passivated Si(111) surfaces. The electric-field-induced modification of Si surfaces, similar to that effected by a scanning tunneling microscope or an atomic force microscope, is observed by the near-field scanning opti cal microscopy as well as by shear-force microscopy.