Interfacial electronic structures in an organic light-emitting diode

Citation
St. Lee et al., Interfacial electronic structures in an organic light-emitting diode, APPL PHYS L, 74(5), 1999, pp. 670-672
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
74
Issue
5
Year of publication
1999
Pages
670 - 672
Database
ISI
SICI code
0003-6951(19990201)74:5<670:IESIAO>2.0.ZU;2-T
Abstract
Direct measurements of electronic properties have been made for the metal/o rganic and organic/organic interfaces in a multilayer organic light-emittin g diode (LED) using ultraviolet photoemission spectroscopy. The device conf iguration considered is indium-tin oxide (ITO)/copper phthalocyanine (CuPc) /N,N'-bis-(1-naphyl)-N,N'-diphenyl- 1,1'-biphenyl-4,4'-diamne (NPB)/8-hydro xyquinoline aluminum (Alq)/Mg. For the material interfaces considered here, our result indicates that the traditional concept of vacuum-level alignmen t, though not valid for metal/organic interfaces, still holds at organic/or ganic interfaces. This implies that little charge transfer occurs at the in terfaces due to the small interaction between organic molecules. The larges t band offsets are observed between the lowest unoccupied state levels of t he organic molecules. Based on the directly measured energy-level alignment s, a model is proposed to explain the improved efficiency of multilayer org anic LEDs, as compared to those with a single organic layer structure. (C) 1999 American Institute of Physics. [S0003-6951(99)04705-1].