Spatially resolved photoluminescence in partially ordered GaInP2

Citation
S. Smith et al., Spatially resolved photoluminescence in partially ordered GaInP2, APPL PHYS L, 74(5), 1999, pp. 706-708
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
74
Issue
5
Year of publication
1999
Pages
706 - 708
Database
ISI
SICI code
0003-6951(19990201)74:5<706:SRPIPO>2.0.ZU;2-J
Abstract
Scanning confocal microscopy combined with high-resolution spectroscopy is used to probe the spatial variations in the low-temperature (5.0 K) photolu minescence (PL) of partially ordered GaInP2 with a spatial resolution of 0. 7 mu m. We observe large regions (1-2 mu m) wherein the excitonic PL is sup pressed up to a factor of four ("defect- rich" regions) when compared to un affected areas. These defect-rich regions show a commensurate enhancement i n the lower energy below gap emission. The spatial extent of this effect is inconsistent with the picture that the low-energy emission originates sole ly at the antiphase boundaries of the ordered domains and therefore must or iginate from other defects within the ordered domain as well. (C) 1999 Amer ican Institute of Physics. [S0003-6951(99)02005-7].