Scanning confocal microscopy combined with high-resolution spectroscopy is
used to probe the spatial variations in the low-temperature (5.0 K) photolu
minescence (PL) of partially ordered GaInP2 with a spatial resolution of 0.
7 mu m. We observe large regions (1-2 mu m) wherein the excitonic PL is sup
pressed up to a factor of four ("defect- rich" regions) when compared to un
affected areas. These defect-rich regions show a commensurate enhancement i
n the lower energy below gap emission. The spatial extent of this effect is
inconsistent with the picture that the low-energy emission originates sole
ly at the antiphase boundaries of the ordered domains and therefore must or
iginate from other defects within the ordered domain as well. (C) 1999 Amer
ican Institute of Physics. [S0003-6951(99)02005-7].