Direct electronic transport through an ensemble of InAs self-assembled quantum dots

Authors
Jung, SK Hwang, SW Choi, BH Kim, SI Park, JH Kim, Y Kim, EK Min, SK
Citation
Sk. Jung et al., Direct electronic transport through an ensemble of InAs self-assembled quantum dots, APPL PHYS L, 74(5), 1999, pp. 714-716
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
74
Issue
5
Year of publication
1999
Pages
714 - 716
Database
ISI
SICI code
0003-6951(19990201)74:5<714:DETTAE>2.0.ZU;2-6
Abstract
Electronic transport properties through an ensemble of InAs self-assembled quantum dots are reported. A metal-semiconductor-metal diode with self-asse mbled quantum dots has been fabricated. Clear staircases are observed in th e current-voltage characteristics measured from the diode, and several peak structures are identified in the differential conductance. These conductan ce peaks are interpreted as due to resonant tunneling through the energy st ates of the self-assembled quantum dots. (C) 1999 American Institute of Phy sics. [S0003-6951(99)01605-8].