Determination of the valence-band offset for GaInAsSb/InP heterostructure

Authors
Chang, JR Su, YK Lu, YT Jaw, DH Shiao, HP Lin, W
Citation
Jr. Chang et al., Determination of the valence-band offset for GaInAsSb/InP heterostructure, APPL PHYS L, 74(5), 1999, pp. 717-719
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
74
Issue
5
Year of publication
1999
Pages
717 - 719
Database
ISI
SICI code
0003-6951(19990201)74:5<717:DOTVOF>2.0.ZU;2-O
Abstract
Unstrained Ga0.64In0.36As0.84Sb0.16/InP single quantum-well structures were grown on InP substrates by metalorganic vapor phase epitaxy. Transmission electron microscopy and temperature-dependent photoluminescence (PL) measur ements were performed. The valence-band offset of the GaInAsSb/InP heteroju nction was estimated by the dependence of PL peak energy on the well width at 8 K. We estimated the valence-band offset to be 70+/-5% of the band-gap difference for the Ga0.64In0.36As0.84Sb0.16/InP heterostructure. (C) 1999 A merican Institute of Physics. [S0003-6951(99)03405-1].