InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs

Authors
Kurtz, SR Allerman, AA Jones, ED Gee, JM Banas, JJ Hammons, BE
Citation
Sr. Kurtz et al., InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs, APPL PHYS L, 74(5), 1999, pp. 729-731
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
74
Issue
5
Year of publication
1999
Pages
729 - 731
Database
ISI
SICI code
0003-6951(19990201)74:5<729:ISCW1E>2.0.ZU;2-5
Abstract
The design, growth by metalorganic chemical vapor deposition, and processin g of an In0.07Ga0.93As0.98N0.02 solar cell, with 1.0 eV band gap, lattice m atched to GaAs is described. The hole diffusion length in annealed, n-type InGaAsN is 0.6- 0.8 mu m, and solar cell internal quantum efficiencies >70% are obtained. Optical studies indicate that defects or impurities, from In GaAsN doping and nitrogen incorporation, limit solar cell performance. (C) 1999 American Institute of Physics. [S0003-6951(99)01805-7].