Nonuniform carrier distribution in asymmetric multiple-quantum-well InGaAsP laser structures with different numbers of quantum wells

A method for quantifying the degree to which the uneven carrier distributio n affects the operation of multiple quantum well (MQW) lasers is developed by comparing the net gains of wells in mirror image asymmetric MQW structur es. The uneven carrier distribution is found to affect the performance of d evices with as few as two quantum wells and decreases the net gain for well s on the n side of a ten quantum well structure by more than a factor of tw o. (C) 1999 American Institute of Physics. [S0003-6951(99)04405-8].