Pseudo-Hall effect in spin-valve multilayers

Magnetoresistance and the pseudo-Hall effect in NiFe/Cu/NiFe/FeMn spin-valv e multilayers were measured simultaneously in fields rotating in the film p lane. Large pseudo-Hall voltages have been observed when the magnetization of the free layer was perpendicular to the sensing current, which was appli ed along the magnetization of the pinned layer. The pseudo-Hall voltages ca nnot be explained by treating the anisotropic magnetoresistance of the two permalloy layers independently. Such a cross effect of the free and pinned layers on the anisotropic magnetoresistance is dependent upon the angle bet ween their magnetization. (C) 1999 American Institute of Physics. [S0003-69 51(99)00105-9].