Structural properties of CuGaxIn1-xSe2 thin films deposited by spray pyrolysis

Citation
Ktr. Reddy et Rbv. Chalapathy, Structural properties of CuGaxIn1-xSe2 thin films deposited by spray pyrolysis, CRYST RES T, 34(1), 1999, pp. 127-132
Citations number
16
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
CRYSTAL RESEARCH AND TECHNOLOGY
ISSN journal
02321300 → ACNP
Volume
34
Issue
1
Year of publication
1999
Pages
127 - 132
Database
ISI
SICI code
0232-1300(1999)34:1<127:SPOCTF>2.0.ZU;2-B
Abstract
Thin films of CuGaxIn1-xSe2 (x=0.0-1.0) have been prepared by spray pyrolys is onto soda-lime glass substrates heated to a temperature of 325 degrees C . The structure, crystal orientations, lattice parameters and grain size of the experimental films have been studied using the X-ray diffraction and s canning electron microscopy. All the deposited films were polycrystalline a nd showed single phase with an intense (112) orientation. The lattice param eters, a and c of the films vary linearly with the change of gallium compos ition. The grain size of the films decrease with the increase of gallium co ntent.