Beryllium diffusion mechanisms in InGaAs compounds grown by gas source molecular beam epitaxy

The redistribution of the p-type dopant Be during the post-growth rapid the rmal annealing in InGaAs layers grown by gas source molecular beam epitaxy has been studied using secondary ion mass spectrometry technique. The exper imental structures consisted of a 2000 Angstrom Be-doped (3 x 10(19) cm(-3) ) In0.53Ga0.47As layer sandwiched between 5000 Angstrom undoped In0.53Ga0.4 7As layers. To explain the observed depth profiles, obtained for annealing cycles with time durations of 10 to 240 s and temperatures in the range of 700-900 degrees C, two models of kick-out mechanism, with neutral and singl y positively ionized Be interstitial species, have been considered.