Xr. Wang et al., The level-shifting-induced negative magnetoresistance in the nearest-neighbor hopping conduction, EUROPH LETT, 45(3), 1999, pp. 368-373
We propose a new mechanism of negative magnetoresistance in non-magnetic gr
anular materials in which electron transport is dominated by hopping betwee
n two nearest-neighbor clusters. We study the dependence of magnetoresistan
ce on temperature and separation between neighboring clusters. At a small s
eparation we find a negative magnetoresistance at low temperatures and it c
hanges over to a positive value as temperature increases. For a fixed tempe
rature, magnetoresistance changes From negative to positive when the cluste
r separation increases. The change of magnetoresistance Delta R/R tan be mo
re than 80 % at low temperatures.