The level-shifting-induced negative magnetoresistance in the nearest-neighbor hopping conduction

Citation
Xr. Wang et al., The level-shifting-induced negative magnetoresistance in the nearest-neighbor hopping conduction, EUROPH LETT, 45(3), 1999, pp. 368-373
Citations number
15
Categorie Soggetti
Physics
Journal title
EUROPHYSICS LETTERS
ISSN journal
02955075 → ACNP
Volume
45
Issue
3
Year of publication
1999
Pages
368 - 373
Database
ISI
SICI code
0295-5075(19990201)45:3<368:TLNMIT>2.0.ZU;2-U
Abstract
We propose a new mechanism of negative magnetoresistance in non-magnetic gr anular materials in which electron transport is dominated by hopping betwee n two nearest-neighbor clusters. We study the dependence of magnetoresistan ce on temperature and separation between neighboring clusters. At a small s eparation we find a negative magnetoresistance at low temperatures and it c hanges over to a positive value as temperature increases. For a fixed tempe rature, magnetoresistance changes From negative to positive when the cluste r separation increases. The change of magnetoresistance Delta R/R tan be mo re than 80 % at low temperatures.