Chemical analysis of thin films by means of SS-MS, GD-OES, and XBS demonstrated at Ir-Si thermoelectrica

Analytical methods with low detection limits were used for the investigatio n of Ir-Si thin films, the physical properties of which vary strongly with the chemical composition and the amount of impurities. It is demonstrated h ow to solve chemical characterization of different thermoelectric Ir-Si thi n films by spark source mass spectrometry (SS-MS), glow discharge optical e mission spectroscopy (GD-OES) and X-ray photoelectron spectroscopy (XPS). T he combined use of the three different facilities allows the quantification of impurities of elements of the entire periodic system in the ppm range ( down to 30 at.-ppm in dependence on the element) incorporated in thin film samples. Additional information about the in-depth distribution of elements or specifically bonded species can be achieved with a high depth resolutio n.