High-performance laser-processed polysilicon thin-film transistors

We present electrical results from hydrogenated laser-processed polysilicon thin-film transistors (TFT's) fabricated using a simple four-mask self-ali gned aluminum top-gate process. Transistor field-effect mobilities of 280-4 50 cm(2)/Vs and on/off current ratios of more than 10(8) are measured in th ese devices. Except for the amorphous-silicon deposition step, the highest processing temperature that the substrate was subjected to was 350 degrees C. Such good performance is attributed to an optimized laser-crystallizatio n process combined with hydrogenation.