High-voltage CdSe-Ge TFT driver circuits for passive AC-TFEL displays

Since an electroluminescent display (ELD) is a capacitive display driven at high voltage, it is necessary to fabricate high-voltage, large-current dri vers, It is shown that a 20-mu m complementary CdSe-Ge thin-film transistor technology can be used to integrate the high-voltage section of the drive circuits on the substrate of an ELD, The realized column driver levels a 15 -V CMOS signal up to a modulation voltage of 50 V, A novel tristate row dri ver circuit, which is based on the symmetric character of the thin-him tran sistor, handles row selecting voltages of about 200 V together with current pulses of approximately 100 mA, In this paper, the design, simulation, and measurement of these circuits are described, Technology problems due to hi gh voltages were solved.