A 1.5-V high drive capability CMOS op-amp

Citation
G. Palmisano et al., A 1.5-V high drive capability CMOS op-amp, IEEE J SOLI, 34(2), 1999, pp. 248-252
Citations number
16
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE JOURNAL OF SOLID-STATE CIRCUITS
ISSN journal
00189200 → ACNP
Volume
34
Issue
2
Year of publication
1999
Pages
248 - 252
Database
ISI
SICI code
0018-9200(199902)34:2<248:A1HDCC>2.0.ZU;2-9
Abstract
A novel CMOS operational amplifier with a 1.5-V power supply is presented. It is based on a folded-mirror transconductance amplifier and a high-effici ency output stage. The amplifier achieves an open-loop gain and a gain-band width product higher than 65 dB and 1 MHz, respectively. In addition, a 1-V peak-to-peak output voltage into a 500-Ohm and 50-pF output load is provid ed with a total harmonic distortion of -77 dB, This performance was achieve d using maximum aspect ratios of 120/1.2 and 360/1.2 for the NMOS and PMOS transistors, respectively, and a quiescent current as low as 60 mu A for th e driver transistors. The amplifier was implemented in a standard 1.2-mu m CMOS process,vith thre shold voltages around 0.8 V. It dissipates less than 300 mu W.