Anion control in molecular beam epitaxy of mixed As/Sb III-V heterostructures

Superlattices consisting of As monolayers (MLs) in (In, Ga, Al)Sb and Sb ML s in (In, Ga, Al)As were grown by molecular beam epitaxy and characterized by x-ray diffraction, Raman spectroscopy, and high-resolution transmission electron microscopy. In all cases, well-defined superlattices were formed w hen the growth temperature was sufficiently low. As temperature increases f or the As MLs in antimonides, substantial intermixing occurs. For Sb MLs in arsenides, Sb evaporation from the surface increases with increasing growt h temperature. These results are discussed in the context of device heteros tructures containing InAs/GaSb and InAs/AlSb heterojunctions. [S0021-8979(9 9)05104-X].