Identification of the nature of platinum related midgap state in silicon by deep level transient spectroscopy

In this article, we present the detailed investigations on platinum related midgap state corresponding to E-c -0.52 eV probed by deep level transient spectroscopy. By irradiating the platinum doped samples with high-energy (1 .1 MeV) gamma rays, we observed that the concentration of the midgap state increases and follows a square dependence with irradiation dose. However, t he concentration of the acceptor corresponding to E-c -20.28 eV remained co nstant. Furthermore, from the studies on passivation by atomic hydrogen and thermal reactivation, we noticed that the E-c -0.52 eV level reappears in the samples annealed at high temperatures after hydrogenation. The interact ion of platinum with various defects and the qualitative arguments based on the law of mass action suggest that the platinum related midgap defect mig ht possibly correspond to the interstitial platinum-divacancy complex (V-Pt -V). (C) 1999 American Institute of Physics. [S0021-8979(99)04804-5].