Impact of the gate material on the interface state density of metal-oxide-silicon devices with an ultrathin oxide layer

Aluminum, chromium, gold and polycrystalline silicon contacted metal-oxide- silicon devices with ultrathin (similar to 3 nm) thermal oxides have been c ompared regarding their electrical characteristics. The impact of the gate material on the features of the interface state density displays itself mai nly as a change in the passivation dynamics during heat treatment of what a ppears to be one and the same as-grown dangling bond defect in all cases. ( C) 1999 American Institute of Physics. [S0021-8979(99)01104-4].