Oxide confining layer on an InP substrate

Authors
Legay, P Caillet, F Decobert, J Leprince, L Le Roux, G Quillec, M
Citation
P. Legay et al., Oxide confining layer on an InP substrate, J APPL PHYS, 85(4), 1999, pp. 2428-2430
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
85
Issue
4
Year of publication
1999
Pages
2428 - 2430
Database
ISI
SICI code
0021-8979(19990215)85:4<2428:OCLOAI>2.0.ZU;2-N
Abstract
Wet thermal oxidation of a strained balanced superlattice structure, epitax ially grown on InP and including high Al content layers, is investigated. T he oxidation kinetics are studied as a function of temperature and oxidatio n duration. The results are interpreted with a simple diffusion model. We p ropose use of this structure as a confining layer for monolithic long wavel ength vertical cavity surface emitting lasers. (C) 1999 American Institute of Physics. [S0021-8979(99)05404-3].