Doping behavior of In0.1Ga0.9N codoped with Si and Zn

We have studied the codoping characteristics of In0.1Ga0.9N : ZnSi/GaN grow n on sapphire (0 0 0 1) substrates. The films were grown in a horizontal MO VPE reactor at the reduced pressure of 300 Torr and 820 degrees C. The FWHM s of the DCXRD for (0 0 0 2) diffraction and PL for band edge emission at r oom temperature from the undoped In0.1Ga0.9N are 11 arcmin and 80 meV. With the appropriate Zn only doping in undoped In0.1Ga0.9N, the emission peak i s shifted from 410 nm which originates from the band edge emission to blue of 460 nm which resulted from the band to acceptor transition due to a deep acceptor level. Besides the shift of the emission peak, the yellow lumines cence peak around 600 nm nearly disappeared by the Zn doping. With the opti mum codoping of Si in In0.1Ga0.9N : Zn, the intensity of blue emission incr eases abruptly by decreasing the defect density playing an important role a s a nonradiative center. (C) 1999 Elsevier Science B.V. All rights reserved .