We use reflection high-energy electron diffraction (RHEED) oscillations to
study the substrate temperature and In/Ga flux ratio dependencies of the gr
owth of pseudomorphic InGaAs layers on GaAs. The growth of InGaAs on GaAs s
hows strongly damped oscillations which is dependent on the substrate tempe
rature. The In mole fraction drops almost linearly with increasing substrat
e temperature above 580 degrees C, with a dropping rate of 0.08-0.13%/degre
es C which is dependent on In/Ga beam equivalent pressure (BEP) ratio. The
In mole fraction drops almost linearly with decreasing substrate temperatur
e below 500 degrees C. The decrease below 500 degrees C reported here is ob
served for the first time. (C) 1999 Elsevier Science B.V. All rights reserv
ed.