Effects of arsenic beam equivalent pressure on InGaAsP grown by solid source molecular beam epitaxy with continuous white phosphorous production

We report the effects of arsenic beam equivalent pressure on lattice mismat ch, electrical properties, surface roughness and morphology of InGaAsP grow n by solid source molecular beam epitaxy using valve arsenic and phosphorou s cracker cells with continuous white phosphorous production. Arsenic is fo und to have a higher sticking coefficient than phosphorous in almost all ar senic pressure employed in the growth. The incorporation of arsenic is foun d to fit a polynomial expression, Y = 1.56R - 0.59R(2), with the beam equiv alent pressure ratio R = f(As)/(f(As) + f(P)). The incorporated arsenic ele ments significantly affect lattice mismatch and electrical properties. They also dominate surface construction of the quaternary material. (C) 1999 El sevier Science B.V. All rights reserved.