Crystal growth of WSi2 on a W(110) surface

The crystal growth of tetragonal WSi2 on a W(1 1 0) surface was investigate d by reflection high-energy electron diffraction (RHEED). It was shown that a one-dimensional crystal grows on the W(1 1 0) surface with the [(7/2 )(0 )(5/8)(5/4)] structure in the early stage of growth. The tetragonal WSi2 cr ystals have an epitaxial orientation relationship [1 0 0] WSi2//[0 0 1]W, w here the (0 1 3) plane of the WSi2 crystal is inclined to the W(1 1 0) plan e at 1.3 degrees. (C) 1999 Published by Elsevier Science B.V. All rights re served.