Effect of starting melt composition on crystal growth of La3Ga5SiO14

The phase diagram of the La2O3-Ga2O3-SiO2 system around La3Ga5SiO14 was inv estigated by a different thermal analysis and the quenching method. On the basis of this diagram, single crystals of La3Ga5SiO14 were grown from diffe rent starting melt compositions by the Czochralski technique. The effect of starting melt composition on crystal quality was examined by measuring the variation of chemical composition and lattice parameters along the growth axis. The congruency and the existence of a solid solution range of La3Ga5S iO14 are discussed. (C) 1999 Elsevier Science B.V. All rights reserved.