The phase diagram of the La2O3-Ga2O3-SiO2 system around La3Ga5SiO14 was inv
estigated by a different thermal analysis and the quenching method. On the
basis of this diagram, single crystals of La3Ga5SiO14 were grown from diffe
rent starting melt compositions by the Czochralski technique. The effect of
starting melt composition on crystal quality was examined by measuring the
variation of chemical composition and lattice parameters along the growth
axis. The congruency and the existence of a solid solution range of La3Ga5S
iO14 are discussed. (C) 1999 Elsevier Science B.V. All rights reserved.