RHEED characterization of InAs/GaAs grown by MBE

A simple method is suggested to obtain reflection high-energy electron diff raction (RHEED oscillation of InAs layer grown on a GaAs substrate. The gro wth process of InAs epilayer as well as the relation between the growth mod e and V/III flux ratios are studied by RHEED oscillation. We find that RHEE D intensity oscillation exists in the range of flux ratios of V/III from 5. 3 to 7.3 under the In-rich conditions and from 10.5 to 22.7 under the As-ri ch conditions. A step flow growth mode occurs in the range of critical flux ratios of V/III from 7.3 to 10.5. A rough surface is observed at higher fl ux ratios of V/III under In-rich conditions. (C) 1999 Elsevier Science B.V. All rights reserved.